650V TO-252 S65R650 Superjunction MOSFET
- Product Description
-
P/N:YZPST-S65R650S65R650 MOSFETDESRCRIPTION:The S65R650 is a Superjunction MOSFET designed to have better characteristics, such as low on-state resistance,Low gate charge, Ultra fast switching ,and High ruggedness. These devices are well suited for high efficiency switched mode power supplies.
ABSOLUTE MAX I MUM RATINGS
Symbol
Parameter
Value
Unit
VDS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Continuous Drain Current
Tc=25℃
8
A
Tc=100℃
6
A
IDM
Pulsed Drain Current
30
A
Ptot
Power Dissipation (TC=25°C)
93
W
Tj
Junction Temperature
150
℃
Tstg
Operation and Storage Temperature
-55 to +150
℃
EAS
Avalanche Energy
74
mJ
ELECTRICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified)
Symbol
Parameter
Test Condition
Value
Unit
Min
Type
Max
BVDSS
Drain-Source Breakdown Voltage
VGS= 0V, ID= 250μA
650
V
IDSS
Drain-Source Leakage Current
VDS=650V ,VGS=0V
1
uA
IGSS
Gate-Source Leakage Current
VGS= ±30V
±100
nA
VGS(th)
Gate Threshold Voltage
VDS= VGS, ID= 250μA
2.5
4.5
V
RDS(ON)
Static Drain-Source On-State Resistance
VGS= 10V ,ID= 4A
503
650
mΩ
PACKAGE MECHANICAL DATA
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