MJ15003 TO-3 Silicon NPN Power Transistor Complement to type MJ15004
- 产品描述
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Silicon NPN Power Transistors YZPST-MJ15003DESCRIPTION·With TO-3 package·Complement to type MJ15004· Excellent safe operating areaAPPLICATIONS· For high power audio,disk head positioners and other linear applications
Absolute maximum ratings(Ta=℃)VCBO
Collector-base voltage
Open emitter
140
V
VCEO
Collector-emitter voltage
Open base
140
V
VEBO
Emitter-base voltage
Open collector
5
V
IC
Collector current
20
A
IB
Base current
5
A
IE
Emitter current
-25
A
PD
Total power dissipation
TC=25℃
250
W
Tj
Junction temperature
200
℃
Tstg
Storage temperature
-65~200
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance junction to case
0.7
℃/W
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
140
V
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=0.5A
1.0
V
VBE
Base-emitter on voltage
IC=5A ; VCE=2V
2.0
V
ICEO
Collector cut-off current
VCE=140V; IB=0
0.25
mA
ICEX
Collector cut-off current
VCE=140V; VBE(off)=1.5V TC=150℃
0.1
2.0
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=5A ; VCE=2V
25
150
Is/b
Second breakdown collector current With base forward biased
VCE=50Vdc,t=1 s, Nonrepetitive
5
A
VCE=100Vdc,t=1 s, Nonrepetitive
1
COB
Output capacitance
IE=0 ; VCB=10V;f=1.0MHz
1000
pF
fT
Transition frequency
IC=0.5A ; VCE=10V;f=0.5MHz
2
MHz
PACKAGE OUTLINE
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