+
  • YZPST-MJ15003(1).jpg
  • YZPST-MJ15003(3).jpg
  • YZPST-MJ15003(5).jpg
  • YZPST-MJ15003(7).jpg

MJ15003 TO-3 Silicon NPN Power Transistor Complement to type MJ15004

Silicon NPN Power Transistors YZPST-MJ15003 DESCRIPTION ·With TO-3 package ·Complement to type MJ15004 · Excellent safe operating area APPLICATIONS · For high power audio,disk head positioners and other linear applications

Product Number:
INQUIRY
  • 产品描述

  • Silicon NPN Power Transistors YZPST-MJ15003
    DESCRIPTION
    ·With TO-3 package
    ·Complement to type MJ15004
    · Excellent safe operating area
    APPLICATIONS
    · For high power audio,disk head positioners and other linear applications
    YZPST-MJ15003 TO-3


    Absolute maximum ratings(Ta=)

     

     

     

     

     

     

    VCBO

    Collector-base voltage

    Open emitter

    140

    V

    VCEO

    Collector-emitter voltage

    Open base

    140

    V

    VEBO

    Emitter-base voltage

    Open collector

    5

    V

    IC

    Collector current

     

    20

    A

    IB

    Base current

     

    5

    A

    IE

    Emitter current

     

    -25

    A

    PD

    Total power dissipation

    TC=25

    250

    W

    Tj

    Junction temperature

     

    200

    Tstg

    Storage temperature

     

    -65~200

     

    THERMAL CHARACTERISTICS

     

    SYMBOL

    PARAMETER

    MAX

    UNIT

    Rth j-c

    Thermal resistance junction to case

    0.7

    /W

     

    CHARACTERISTICS

    Tj=25 unless otherwise specified

     

    SYMBOL

    PARAMETER

    CONDITIONS

    MIN

    TYP.

    MAX

    UNIT

    VCEO(SUS)

    Collector-emitter sustaining voltage

    IC=0.2A ;IB=0

    140

     

     

    V

    VCEsat

    Collector-emitter saturation voltage

    IC=5A; IB=0.5A

     

     

    1.0

    V

    VBE

    Base-emitter on voltage

    IC=5A ; VCE=2V

     

     

    2.0

    V

    ICEO

    Collector cut-off current

    VCE=140V; IB=0

     

     

    0.25

    mA

    ICEX

    Collector cut-off current

    VCE=140V; VBE(off)=1.5V TC=150

     

     

    0.1

    2.0

    mA

    IEBO

    Emitter cut-off current

    VEB=5V; IC=0

     

     

    0.1

    mA

    hFE

    DC current gain

    IC=5A ; VCE=2V

    25

     

    150

     

     

    Is/b

     

    Second breakdown collector current With base forward biased

    VCE=50Vdc,t=1 s, Nonrepetitive

    5

     

     

     

    A

    VCE=100Vdc,t=1 s, Nonrepetitive

    1

    COB

    Output capacitance

    IE=0 ; VCB=10V;f=1.0MHz

     

     

    1000

    pF

    fT

    Transition frequency

    IC=0.5A ; VCE=10V;f=0.5MHz

    2

     

     

    MHz

     

    PACKAGE OUTLINE

    YZPST-MJ15003 package

Product Inquiry

We will contact you within one working day. Please pay attention to your email.

* Note: Please be sure to fill in the information accurately and keep the communication unblocked. We will get in touch with you as soon as possible.

Inquiry Now

We will contact you within one working day. Please pay attention to your email.

Submit Now