R-6 General Purpose Silicon Diode YZPST-6A10T
- 产品描述
-
6A05T THRU 6A10TGENERAL PURPOSE SILICON DIODEReverse Voltage - 50 to 1000 Volts Forward Current - 6.0 AmperesFEATURESThe plastic package carries Underwriters Laboratory Flammability Classification 94V-0Construction utilizes void-free molded plastic techniqueLow reverse leakageHigh forward surge current capabilityHigh temperature soldering guaranteed:260℃/10 seconds,0.375”(9.5mm) lead length,5 lbs. (2.3kg) tensionMECHANICAL DATACase: R-6 molded plastic bodyTerminals: Plated axial leads, solderable per MIL-STD-750, Method 2026Polarity: Color band denotes cathode endMounting Position: AnyWeight:0.072 ounce, 2.05 gramsMAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICSRatings at 25。C ambient temperature unless otherwise specified.Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
6A05T
6A1 T
6A2T
6A4T
6A6T
6A8T
6A10T
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
200
400
600
800
1000
VOLTS
Maximum RMS voltage
VRMS
35
70
140
280
420
560
700
VOLTS
Maximum DC blocking voltage
VDC
50
100
200
400
600
800
1000
VOLTS
Maximum average forward rectified current 0.375”(9.5mm) lead length at TA=60 C
I(AV)
6.0
Amps
Peak forward surge current
8.3ms single half sine-wave superimposed on rated load (JEDEC Method)
IFSM
400
Amps
Maximum instantaneous forward voltage at 6.0A
VF
0.95
Volts
Maximum DC reverse current at rated DC blocking voltage
TA=25 C
TA=100 C
IR
10.0
400
μA
Typical junction capacitance (NOTE 1)
CJ
150
pF
Typical thermal resistance (NOTE 2)
RθJA
10.0
。C/W
Operating junction and storage temperature range
TJ,TSTG
-65 to +175
。C
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.2.Thermal resistance from junction to ambient at 0.375 ” (9.5mm)lead length,P.C.B. mounted
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