Fast switching TO3P-3 30MHz RF Power MOSFET
P/N: YZPST-RH55N30T
Logic-LeveI Gate Drive
Advanced process TechnoIogy
Dynamic dv/dt Rating
175℃ operating TemperatUre
Fast switching
FUIIyAvaIanche Rated
Lead-Free
RF Power MOSFET - 30MHz
V DSS=55V
RDS(on)=0.035Ω
ID=30A
Product Number:
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- 产品描述
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P/N: YZPST-RH55N30TLogic-LeveI Gate DriveAdvanced process TechnoIogyDynamic dv/dt Rating175℃ operating TemperatUreFast switchingFUIIyAvaIanche RatedLead-FreeRF Power MOSFET - 30MHzV DSS=55VRDS(on)=0.035ΩID=30A
AbsoIute Maximum Ratings
parameter Max. units ID @ Tc = 25。c continuous Drain current, VGS @ 10V 30 ID @ Tc = 100。c continuous Drain current, VGS @ 10V 21 A IDM PuIsed Drain current 0① 110 PD @Tc = 25。c Power Dissipation 68 w Linear Derating Factor 0.45 w/。c VGS Gate-to-source VoItage ±16 V EAS singIe PuIse AvaIanche Energy ② 110 mJ IAR AvaIanche current① 16 A EAR Repetitive AvaIanche Energy① 6.8 mJ dv/dt Peak Diode Recovery dv/dt ③ 5 V/ns TJ operating Junction and -55 to + 175 storage Temperature Range 。c TSTG soIdering Temperature, for 10 seconds 300 (1.6mm from case) Mounting torque, 6-32 or M3 screw. 10 Ibf.in (1.1N.m) ThermaI Resistance
parameter Min. TYP. Max. units RθJc Junction-to-case 一一一一 一一一一 2.2 ℃/W RθcS case-to-sink, FIat, Greased surface 一一一一 0.5 一一一一 RθJA Junction-to-Ambient 一一一一 一一一一 62 
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