Features:  All Diffused Structure  Interdigitated Amplifying Gate Configuration           Blocking capabilty up to 1300 volts  Guaranteed Maximum Turn-Off Time  High dV/dt Capability  Pressure Assembled Device

Bi-Directional Control Thyristor Blocking     Parameter Symbol Unit   SKP24F33Q   SKP24F30Q   SKP24F28Q   SKP24F26Q Conditions Non-repetitive peak off-state and reverse voltage   VDSM,VRSM   V   3400   3100   2900   2700   f = 5 Hz, tp = 10ms repetitive peak off-state and reverse voltage   VDRM,VRRM   V   3300   3000   2800   2600   f = 50 Hz, tp = 10ms Non-repetitive peak off-state and reverse current   IDSM,IRSM   mA   400   VDSM,VRSM ,Tj = 125°C repetitive peak off-state and reverse current   IDRM,IRRM   mA   400   VDRM,VRRM, Tj  = 125°C Critical rate of rise of off-state voltage   dv/dtcrit   V/µs   1000 Exp.to 0.67VDRM, Tj = 125°C On-state   Parameter Symbol Unit Max Conditions Average on-state current ITAVM A 2437   RMS on-state current ITRMS A 3818 Half sine wave, TC = 70°C Peak non-repetitive current ITSM KA 43   Limiting load integral I2t kA2s 9622 tp=10ms, Tj =125°C, Half sine wave, VD = VR = 0V after surge Peak on-state voltage VT V 1.45 IT=3000A ,Tj =125°C Threshold voltage VT0 V 0.85   Slope resistance rT mΩ 0.2 IT=1500-4500A, ,Tj =125°C     mA 150 Tj=25°C Holding current IH mA 130 Tj=125°C     mA 1000 Tj=25°C Latching current IL mA 900 Tj=125°C Switching   Parameter Symbol Unit Max Conditions Critical rate of rise of       VD ≤ 0.67 VDRM , Tj =125°C, f=50Hz on-state current di/dtcrit A/µs 200 ITRM≤2400A, IFG=2.0 A ,tr = 0.5 µs , Circuit-commutated turn-off       VD   ≤ 0.67 VDRM   time tq µs 700 dvD/dt = -30 V/µs ITRM =2000A, Tj = 125°C VR = 200 V, Reverse Min   µAs 6000   diT/dt = -10 A/µs recovery charge Max Qrr µAs 8000        

Features: . All Diffused Structure . Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

YZPST-17HF(R)120  Features:  Wide current range High surge current capabilities Stud cathode and stud anode version Typical  Applications: Converters Power supplies Machine tool controls Battery charges

1200V Standard recovery stud diode 40A YZPST-40HF(R)120

Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Blocking capabilty up to 2500 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Thyristor Features: . All Diffused Structure . Interdigitated Amplifying Gate Configuration . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

YZPST-C712L Features: . All Diffused Structure . Center Amplifying Gate Configuration . Blocking capabilty up to 2100 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Features: . All Diffused Structure . Center Amplifying Gate Configuration                  . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Features: . All Diffused Structure . Linear Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device

Phase Control Thyristors Features ● Center amplifying gate configuration ● Compression bonded encapsulation ● High dV/dt Capability ● Stud type, thread inch or metric

Features · Heat Transfer Through Aluminium Oxide Ceramic Isolated Metal Baseplate · Hard Soldered Joints For High Reliability · UL Recognized Typical Applications · Rectifier for drives applications · Rectifiers for UBS · Battery chargers