Low losses Fast Recovery Epitaxial Diode Module MEO450-12DA
- 产品描述
-
P/N: YZPST-MEO450-12DAPRODUCT FEATURESFast recovery epitaxial diodeSoft Recovery behaviourPlanar passivated chipsShort recovery timeLow Switching lossesHigh reliability circuit operationLow voltage peaks for reduced protection circuitsLow noise switchingLow lossesAPPLICATIONSAnti-Parallel diode for high frequency switching devicesFree wheeling diode in converters And motor control circuitsUninterruptible Power Supply (UPS)Induction heating and meltingUltrasonic cleaners and welders
ABSOLUTE MAXIMUM RATINGS TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
1200
V
VRRM
Maximum Repetitive Reverse Voltage
1200
V
IF(AV)
Average Forward Current
TJ= 150°C
453
A
IF(RMS)
RMS Forward Current
TJ=75°C
640
A
IFSM
max Surge Forward Current
t = 10ms (50Hz),sine,TJ=45°C
4800
A
t = 8.3ms (60Hz),sine,TJ=45°C
5280
t = 10ms (50Hz),sine,TJ= 150°C
4320
t = 8.3ms (60Hz),sine,TJ= 150°C
4750
I2t
I2t value for fusing
t = 10ms (50Hz),sine,TJ=45°C
115.2
2 kA s
t = 8.3ms (60Hz),sine,TJ=45°C
117.1
t = 10ms (50Hz),sine,TJ= 150°C
93.3
t = 8.3ms (60Hz),sine,TJ= 150°C
94.8
VTO
Threshold voltage
TJ= 150°C
1.16
V
rT
Slope resistance
TJ= 150°C
1.15
m Ω
Ptot
Total power dissipation
TJ=25°C
1750
W
TJ
Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +125
°C
Visol
Insulation Test Voltage
AC, t= 1min
2500
V
Torque
Module-to-Sink
Recommended（M6）
3～5
N·m
Module Electrodes
Recommended（M6）
3～5
N·m
RθJC
Thermal Resistance
Junction-to-Case
0.071
°C /W
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