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TO-92 Plastic-Encapsulate PNP Epitaxial Planar Silicon Darlington Transistor

TO-92 Plastic-Encapsulate Transistors P/N: YZPST-2SB888 PNP Epitaxial Planar Silicon Darlington Transistor Applications Motor drivers, printer hammer drivers, relay drivers, votlage regulator control. Features High DC current gain (5000 or greater). Large current capacity and wide ASO. Low saturation voltage : VCE(sat)=–0.8V typ.

Product Number: YZPST-2SB888
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  • Product Description
  • TO-92 Plastic-Encapsulate Transistors
    P/N: YZPST-2SB888
    PNP Epitaxial Planar Silicon Darlington Transistor
    Applications
    Motor drivers, printer hammer drivers, relay drivers, votlage regulator control.
    Features
    High DC current gain (5000 or greater).
    Large current capacity and wide ASO.
    Low saturation voltage : VCE(sat)=–0.8V typ.
    YZPST-2SB888 TO-92

    Absolute Maximum Ratings at Ta = 25˚C

     

    Symbol

    Parameter

    Conditions

    Ratings

    Unit

    VCBO

    Collector-to-Base Voltage

     

    –80

    V

    V CEO

    Collector-to-Emitter Voltage

     

    –50

    V

    VEBO

    Emitter-to-Base Voltage

     

    –10

    V

    IC

    Collector Current

     

    –0.7

    A

    ICP

    Collector Current (Pulse)

     

    –2

    A

    PC

    Allowable Collector Dissipation

     

    600

    mW

    Tj

    Junction Temperature

     

    150

    ˚C

    Tstg

    Storage Temperature

     

    –55 to +150

    ˚C

    Electrical Characteristics at Ta = 25˚C

     

    Symbol

    Parameter

    Conditions

    Ratings

    Unit

    min

    typ

    max

    ICBO

    Collector Cutoff Current

    V CB=–40V, IE=0

     

     

    –0.1

    µA

    IEBO

    Emitter Cutoff Current

    VEB=–8V, IC=0

     

     

    –0.1

    µA

    h FE1

    DC Current Gain

    VCE=–2V, IC=–50mA

    5000

     

     

     

    h FE2

    VCE=–2V, IC=–500mA

    3000

     

     

     

    fT

    Gain-Bandwidth Product

    VCE=–5V, IC=–50mA

     

    170

     

    MHz

    Cob

    Output Capacitance

    V CB=–10V, f=1MHz

     

    16

     

    pF

    VCE(sat)

    Collector-to-Emitter Saturation Voltage

    IC=–100mA, IB=–0.1mA

     

    –0.8

    –1.2

    V

    V BE(sat)

    Base-to-Emitter Saturation Voltage

    IC=–100mA, IB=–0.1mA

     

    –1.3

    –2.0

    V

    V(BR)CBO

    Collector-to-Base Breakdown Voltage

    IC=–10µA, IE=0

    –80

     

     

    V

    V(BR)CEO

    Collector-to-Emitter Breakdown Voltage

    IC=–1mA, R BE=

    –50

     

     

    V

    V(BR)EBO

    Emitter-to-Base Breakdown Voltage

    IE=–10µA, IC=0

    –10

     

     

    V

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