TO-92 Plastic-Encapsulate PNP Epitaxial Planar Silicon Darlington Transistor
- Product Description
-
TO-92 Plastic-Encapsulate TransistorsP/N: YZPST-2SB888PNP Epitaxial Planar Silicon Darlington TransistorApplicationsMotor drivers, printer hammer drivers, relay drivers, votlage regulator control.FeaturesHigh DC current gain (5000 or greater).Large current capacity and wide ASO.Low saturation voltage : VCE(sat)=–0.8V typ.
Absolute Maximum Ratings at Ta = 25˚C
Symbol
Parameter
Conditions
Ratings
Unit
VCBO
Collector-to-Base Voltage
–80
V
V CEO
Collector-to-Emitter Voltage
–50
V
VEBO
Emitter-to-Base Voltage
–10
V
IC
Collector Current
–0.7
A
ICP
Collector Current (Pulse)
–2
A
PC
Allowable Collector Dissipation
600
mW
Tj
Junction Temperature
150
˚C
Tstg
Storage Temperature
–55 to +150
˚C
Electrical Characteristics at Ta = 25˚C
Symbol
Parameter
Conditions
Ratings
Unit
min
typ
max
ICBO
Collector Cutoff Current
V CB=–40V, IE=0
–0.1
µA
IEBO
Emitter Cutoff Current
VEB=–8V, IC=0
–0.1
µA
h FE1
DC Current Gain
VCE=–2V, IC=–50mA
5000
h FE2
VCE=–2V, IC=–500mA
3000
fT
Gain-Bandwidth Product
VCE=–5V, IC=–50mA
170
MHz
Cob
Output Capacitance
V CB=–10V, f=1MHz
16
pF
VCE(sat)
Collector-to-Emitter Saturation Voltage
IC=–100mA, IB=–0.1mA
–0.8
–1.2
V
V BE(sat)
Base-to-Emitter Saturation Voltage
IC=–100mA, IB=–0.1mA
–1.3
–2.0
V
V(BR)CBO
Collector-to-Base Breakdown Voltage
IC=–10µA, IE=0
–80
V
V(BR)CEO
Collector-to-Emitter Breakdown Voltage
IC=–1mA, R BE=∞
–50
V
V(BR)EBO
Emitter-to-Base Breakdown Voltage
IE=–10µA, IC=0
–10
V
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