Advanced Technology R80N65HTNF 650V N-Channel Power MOSFET
- 产品描述
-
P/N: YZPST-R80N65HTNFN-Channel Power MOSFETFeaturesAdvanced technologyExcellent conduction and switching lossExcellent stability and uniformityFast and soft antiparallel diodeApplicationsInduction convertersUninterruptible power suppliesKey Performance Parameters
Parameter
Value
Unit
VCES, min @ 25 °C
650
V
Maximum junction temperature
175
°C
IC, pulse
320
A
VCE(sat), typ @ VGE=15 V
1.35
V
Qg
224
nC
Marking Information
Product Name
Package
Marking
R8 0N65HTNF
TO247
R80N65HTN
Package & Pin Information
Absolute Maximum Ratings at Tvj=25 。C unless otherwise noted
Parameter
Symbol
Value
Unit
Collector emitter voltage
VCES
650
V
Gate emitter voltage
VGES
±20
V
Transient gate emitter voltage, TP≤10 µs, D<0.01
±30
V
Continuous collector current1) , TC=25 °C
IC
114
A
Continuous collector current1) , TC=100 °C
80
A
Pulsed collector current2) , TC=25 °C
IC, pulse
320
A
Diode forward current1) , TC=25 °C
IF
114
A
Diode forward current1) , TC=100 °C
80
A
Diode pulsed current2) , TC=25 °C
IF, pulse
320
A
Power dissipation3) , TC=25 °C
PD
395
W
Power dissipation3) , TC=100 °C
198
W
Operation and storage temperature
Tstg, Tvj
-55 to 175
°C
Package Information
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