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YZPST-RD060120H

1200V SiC Schottky Diode YZPST-RD060120H Features Zero Forward Recovery Voltage Zero Reverse Recovery Current Excellent Surge Current Capability Temperature Independent Switching Positive Temperature Coefficient on VF High Frequency Operation Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses High Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Application Parallel Devices Without Thermal Runaway Power Factor Correction DC-AC Inverters DC-DC Inverters

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Diode

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产品描述

1200V SiC Schottky Diode

YZPST-RD060120H

Features

Zero Forward Recovery Voltage

Zero Reverse Recovery Current

Excellent Surge Current Capability

Temperature Independent Switching

Positive Temperature Coefficient on VF

High Frequency Operation

Benefits

Replace Bipolar with Unipolar Rectifiers

Essentially No Switching Losses

High Efficiency

Reduction of Heat Sink Requirements

Parallel Devices Without Thermal Runaway

Application

Parallel Devices Without Thermal Runaway

Power Factor Correction

DC-AC Inverters

DC-DC Inverters

Parameter	Value	Unit
VRRM	1200	V
IF（TC =145℃)	60	A
QC	306	nC

Maximum ratings at Tj =25℃, Unless otherwise specified

Parameter	Symbol	Test Condition	Value	Unit
Repetitive Peak Reverse Voltage	VRRM		1200	V
Forward Current	IF	TC =25℃ TC =145℃	155 60	A
Non-Repetitive Forward Surge Current	IFSM	TC =25°C, tp =10ms, Half Sine Wave	450	A
Power Dissipation	Ptot	TC =25℃, Tj =175℃	535	W
Operating and Storage Temperature	Tj, Tstg		-55 to +175	℃

TO-247-2L Package Dimensions

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YZPST-RD060120H

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