BYV28-200 SOD-64 sintered glass junction ultrafast avalanche rectifier diode

P/N:YZPST-BYV28-200 SINTERED GLASS JUNCTION ULTRAFAST AVALANCHE RECTIFIER VOLTAGE ：200V CURRENT: 3.5A FEATURE Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA Case: SOD-64 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any

Product Number: YZPST-BYV28-200

Category：

Diode

INQUIRY

Product Description

P/N:YZPST-BYV28-200

SINTERED GLASS JUNCTION

ULTRAFAST AVALANCHE RECTIFIER

VOLTAGE ：200V CURRENT: 3.5A

FEATURE

Glass passivated

High maximum operating temperature Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

MECHANICAL DATA

Case: SOD-64 sintered glass case

Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C

Polarity: color band denotes cathode end Mounting position: any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25。C, unless otherwise stated)
		SYMBOL	BYV28-200	units
Maximum Recurrent Peak Reverse Voltage		VRRM	200	V
Maximum RMS Voltage		VRMS	140	V
Maximum DC blocking Voltage		VDC	200	V
Reverse avalanche breakdown voltage at IR = 0.1 mA		V(BR)R	220min	V
Maximum Average Forward Rectified Current 3/8” lead length at Ttp =85。C		IFAV	3.5	A
Non-repetitive Peak Forward Current at t=10ms half sine wave		IFSM	90	A
Maximum Forward Voltage at Forward Current 3.5A		VF	1.02	V
Non-repetitive peak reverse avalanche energy (Note 1)		ERSM	20	mJ
Maximum DC Reverse Current at rated DC blocking voltage	Ta =25。C Ta =165。C	IR	5.0 150.0	μA
Maximum Reverse Recovery Time (Note 2)		Trr	25	nS
Diode Capacitance (Note 3)		Cd	190	pF
Typical Thermal Resistance (Note 4)		Rth(ja)	75	K/W
Storage and Operating Junction Temperature		Tstg, Tj	-65 to +175	。C
Note: 1. R=400mA; Tj=Tjmax prior to surge; inductive load switched off 2. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc 4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick; thickness of Cu-layer≥40 μm

COOKIES

Our website uses cookies and similar technologies to personalize the advertising shown to you and to help you get the best experience on our website. For more information, see our Privacy & Cookie Policy

COOKIES

required

These cookies are necessary for basic functions such as payment. Standard cookies cannot be turned off and do not store any of your information.

analyze

These cookies collect information, such as how many people are using our site or which pages are popular, to help us improve the customer experience. Turning these cookies off will mean we can't collect information to improve your experience.

Feature

These cookies enable the website to provide enhanced functionality and personalization. They may be set by us or by third-party providers whose services we have added to our pages. If you do not allow these cookies, some or all of these services may not function properly.

advertise

These cookies help us understand what you are interested in so that we can show you relevant advertising on other websites. Turning these cookies off will mean we are unable to show you any personalized advertising.

Business license