TO-P3 YZPST-BTW69-1200 1200V 50A SCR
YZPST-BTW69-1200 SCRs
High current density due to double mesa technology.
series of silicon controlled TO-P3(insulated)
rectifiers are specifically designed for high power switching and phase control applications.
series are suitable for general purpose applications, a high gate sensitvity is required.
provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.
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- 产品描述
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YZPST-BTW69-1200 SCRsHigh current density due to double mesa technology.series of silicon controlled TO-P3(insulated)rectifiers are specifically designed for high power switching and phase control applications.series are suitable for general purpose applications, a high gate sensitvity is required.provides a 2500V RMS isolation voltage from all three terminalsto extemal heetsink.
MAIN FEATURESSymbol Value Unit IT(RMS) 50 A IGT ≤80 mA VTM ≤1.8 V ABSOLUTE MAXIMUM RATINGS
Parameter Symbol Value Unit Storage junction temperature range Tstg -40 to +150 ℃ Operrating junction temperature range Tj -40 to +125 ℃ Repetitive Peak Off-state Voltage Tj=25℃
Repetit ve Peak Reverse Voltage Tj=25℃VDRM
VRRMV BTW69-1200 1200 RMS on-state current (all conduction angels) TO-P3 Tc=80℃ IT(RMS) 50 A Average on-state current (half sine wave) TO-P3 Tc=80℃ IT(AV) 40 A Non repelitive surge peak on-state current
(half sine cycle,Tj=25℃)f=50 Hz t=10ms ITSM 520 A f=60 Hz t=8.3ms 540 I²t Value for fusing tp=10ms I²t 1350 A²s Repetitive rate of rise of on-state current after triggering
ITM=20A IG=50mA dlc/dt 50mA/msdl/dt 150 Aμs Peak gate current tp=20us,Tj=125℃ IGM 1.5 A Peak gate power tp=20us,Tj=125℃ PGM 10 W Average gate power dissipation Tj=125℃ PG(AV) 2 W
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