1uF IGBT buffer absorption capacitor 32.5mm
1uF IGBT buffer absorption capacitor P=32.5mm
IGBT buffer absorption capacitor
Rated capacitance  ( CN ):1μF
Rated voltage(UN ):1600V.dc
Surge voltage(US ):2400V     t<100ms
   Product Number: YZPST-MKPD-MC 1UF1600VDC
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                        1uF IGBT buffer absorption capacitor P=32.5mm IGBT buffer absorption capacitor Rated capacitance ( CN ):1μF Rated voltage(UN ):1600V.dc Surge voltage(US ):2400V t<100ms Specifications Reference standards IEC 61071(GB/T 17702) Rated capacitance ( CN ) 1μF Capacitance tolerance ± 5%(J ) Rated voltage(UN ) 1600V.dc Surge voltage(US ) 2400V t<100ms 1 . 1UN 8h/day 1 . 15UN 30min/day Over voltage 1 . 2UN 5min/day 1 . 3UN 1min/day Max . current(Im a x ) 25A(40°C) Max . peak current(Ip ea k ) 1 . 1kA Dielectric dissipation factor(tanδ0 ) 2×10- 4 Series resistance(Rs ) 6mΩ(100kHz) Self- inductance(Ls ) 28nH Expected lifetime 100000h Failure rate 30 FIT  Test data Test voltage between terminals(UT-T ) 1 . 5UN/10s Test voltage between terminals to case(UT- C ) 4000V.ac/10s Dissipation factor(tanδ) ≤1×10- 3 (1kHz) Insulation resistance(@20°C, 100V, 1min) IR≥15000MΩ(C N ≤0 .33μF) IR×CN ≥ 5000s(CN >0 .33 μF) Environmental data Operating temperature -40°C ~ +85°C Storage temperature -40°C ~ +85°C Climatic category 40/85/21 Cooling Natural cooling Max . altitude 2000m Outline drawing Length(L) 57 . 5mm Depth(D) 30mm Height(H) 45mm Center distance(P) 32 . 5mm   
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