Fast Recovery Body Diode YZPST-R03N120TP 1200VN-chPlanar MOSFET
- Product Description
-
P/N: YZPST-R03N120TP1200VN-chPlanar MOSFETGeneral FeaturesRoHS CompliantRDS(ON),typ.=6Ω@VGS=10VLow Gate Charge Minimize Switching LossFast Recovery Body DiodeApplicationsAdaptorChargerSMPS Standby PowerLead Free package and Finish
BVDSS
RDS(ON),typ.
ID
1200V
6Ω
3.0A
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
R03N120TP
Unit
VDSS
Drain-to-Source Voltage
1200
V
VGSS
Gate-to-Source Voltage
±30
ID
Continuous Drain Current
3.0
A
IDM
Pulsed Drain Current at VGS=10V
12
EAS
Single Pulse Avalanche Energy
100
mJ
dv/dt
Peak Diode Recovery dv/dt[3]
5.0
V/ns
PD
Power Dissipation
75
W
Derating Factor above 25℃
0.6
W/℃
TL
Soldering Temperature
Distance of 1.6mm from case for 10 seconds
300
℃
TJ& TSTG
Operating and StorageTemperatureRange
-55 to 150
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Characteristics
Symbol
Parameter
R03N120TP
Unit
RθJC
Thermal Resistance, Junction-to-Case
1.67
℃/W
RθJA
Thermal Resistance, Junction-to-Ambient
62
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