1200V 20A TO-247-3L SiC Schottky Diode
- 产品描述
-
YZPST-IDW20G120C5BFKSA1 (YZPST-RD20120T)
SiC Schottky Diode
FeaturesZero Forward Recovery VoltageZero Reverse Recovery CurrentExcellent Surge Current CapabilityTemperature Independent SwitchingPositive Temperature Coefficient on VFHigh Frequency OperationBenefitsIncreased Power DensityEssentially no Switching LossesReduction of Heat Sink RequirementsHigher EfficiencyReduced EMIApplicationsUninterruptible Power SuppliesSwitch Mode Power SuppliesPower Factor CorrectionMotor Drivers
Maximum ratings (Tj=25℃ unless otherwise specified)Symbol
Parameter
Test conditions
Value
Unit
VRRM
Repetitive peak reverse voltage
1200
V
VRSM
Surge peak reverse voltage
1200
V
IF
Continuous forward current
TC=25°C TC=155°C
35*/70** 10*/20**
A
IFSM
Non-Repetitive forward surge current
TC=25°C , tp=10ms, Half Sine Wave
105*
A
IFRM
Repetitive Peak Forward Surge Current
TC=25°C , tp=10ms, Half Sine Wave
60*
A
∫i2dt
i2t value
TC=25°C , tp=10ms
55.1*
A2S
Ptot
Power dissipation
TC=25°C TC=110°C
197* 85*
W
Tj
Operating junction temperature
-55~175
°C
Tstg
Storage temperature
-55~175
°C
Package Outlines
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