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700V 58A 80mΩ Super GaN in DFN8×8

P/N:YZPST-RGN700C29D8 700V Super-GaN 700V 58A 80mΩ Super GaN in DFN8*8 Datasheet Features Enhancement mode transistor-Normally off power switch Ultra high switching frequency No reverse-recovery charge Low gate charge, low output charge Qualified for industrial applications according to JEDEC Standards ESD safeguard RoHS, Pb-free, REACH-compliant Applications AC-DC converters DC-DC converters BCM/DCM totem pole PFC Fast battery charging High density power conversion High efficiency power conversion

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  • 产品描述
  • P/N:YZPST-RGN700C29D8
    700V Super-GaN
    700V 58A 80mΩ Super GaN in DFN8*8 Datasheet
    Features
    Enhancement mode transistor-Normally off power switch
    Ultra high switching frequency
    No reverse-recovery charge
    Low gate charge, low output charge
    Qualified for industrial applications according to JEDEC Standards
    ESD safeguard
    RoHS, Pb-free, REACH-compliant
    Applications
    AC-DC converters
    DC-DC converters
    BCM/DCM totem pole PFC
    Fast battery charging
    High density power conversion
    High efficiency power conversion
    YZPST-RGN700C29D8

    Key performance parameters at Tj = 25 °C

     

    Parameter

    Value

    Unit

    VDS,max

    700

    V

    RDS(on),max VGS  = 6 V

    80

    QG,typ VDS  = 400 V

    6.2

    nC

    ID,pulse

    58

    A

    QOSS VDS  = 400 V

    60

    nC

    Qrr VDS = 400 V

    0

    nC

     

    Maximum ratings at Tj = 25 °C unless otherwise specified

     

    Parameter

    Symbol

    Values

    Unit

    Note/Test Condition

    Drain source voltage

    VDS,max

    700

    V

    VGS = 0 V,

    Tj = -55 °C to 150 °C

    Drain source voltage transient 1

    VDS,transient

    800

    V

    VGS = 0 V

    Drain source voltage, pulsed 2

    VDS,pulse

    750

    V

    Tj = 25 °C; total time < 10 h

    Tj = 125 °C; total time < 1 h

    Continuous current, drain source

    ID

    29

    A

    Tc = 25 °C

    Pulsed current, drain source 3

    ID,pulse

    58

    A

    Tc = 25 °C; VGS  = 6 V; tPULSE = 10 µs

    Pulsed current, drain source 3

    ID,pulse

    29

    A

    Tc = 125 °C; VGS  = 6 V; tPULSE = 10 µs

    Gate source voltage, continuous

    VGS

    -6 to +7

    V

    Tj = -55 °C to 150 °C

     

    Gate source voltage, pulsed

     

    VGS,pulse

     

    -20 to +10

     

    V

    Tj = -55 °C to 150 °C;

    tPULSE  = 50 ns, f = 100 kHz; open drain

    Power dissipation

    Ptot

    188

    W

    Tc = 25 °C

    Operating temperature

    Tj

    -55 to +150

    C

     

    Storage temperature

    Tstg

    -55 to +150

    C

     

    Package outlines

    YZPST-RGN700C29D8 Package outlines

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