800V 9A 480mΩSuper GaN in DFN 5X6
- 产品描述
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P/N:YZPST-RGN800C05D5 Super GaN800V 9A 480mΩ Super GaN in DFN 5X6 DatasheetFeaturesEnhancement mode transistor-Normally off power switchUltra high switching frequency No reverse-recovery chargeLow gate charge, low output chargeQualified for industrial applications according to JEDEC Standards ESD safeguardRoHS, Pb-free, REACH-compliantApplicationsAC-DC convertersDC-DC convertersTotem pole PFCFast battery chargingHigh density power conversionHigh efficiency power conversion
Pin information
Gate
Drain
Kelvin Source
Source
8
1, 2, 3, 4
7
5, 6, 9
Key performance parameters at Tj = 25 °C
Parameter
Value
Unit
VDS,max
800
V
RDS(on),max @ VGS = 6 V
480
mΩ
QG,typ @ VDS = 400 V
1.3
nC
ID,pulse
9
A
QOSS @ VDS = 400 V
10.5
nC
Qrr @ VDS = 400 V
0
nC
Maximum ratings at Tj = 25 °C unless otherwise specified.
Parameter
Symbol
Values
Unit
Note/Test Condition
Drain source voltage
VDS, max
800
V
VGS = 0 V,
Tj = -55 °C to 150 °C
Drain source voltage transient 1
VDS, transient
800
V
VGS = 0 V
Drain source voltage, pulsed 2
VDS, pulse
750
V
Tj = 25 °C; total time < 10 h
Tj = 125 °C; total time < 1 h
Continuous current, drain source
ID
5
A
Tc = 25 °C
Pulsed current, drain source 3
ID, pulse
9
A
Tc = 25 °C; VGS = 6 V; tPULSE = 10 µs
Pulsed current, drain source 3
ID, pulse
5
A
Tc = 125 °C; VGS = 6 V; tPULSE = 10 µs
Gate source voltage, continuous 4
VGS
-1.4 to +7
V
Tj = -55 °C to 150 °C
Gate source voltage, pulsed
VGS, pulse
-20 to +10
V
Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f = 100 kHz; open drain
Power dissipation
Ptot
40
W
Tc = 25 °C
Operating temperature
Tj
-55 to +150
。C
Storage temperature
Tstg
-55 to +150
。C
Package outlines
Recommended PCB footprint
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