TO-263-3L 100V 30mΩ N-Ch Power MOSFET
- 产品描述
-
100V 30mΩ N-Ch Power MOSFETYZPST-RD100N26CFeaturesLow RDS(ON)Low Gate Charge100% UIS Tested, 100% Rg TestedPb-free Lead PlatingHalogen-free and RoHS-compliantApplicationsPower Managerment in Telecom., Industrial Automation, CECurrent Switching in DC/DC & AC/DC (SR) Sub-systemsMotor Drivin in Power Tool, E-vehicle, Robotics
Product Summary
Parameter
Typ.
Unit
VDS
100
V
VGS(th)
1.9
V
ID (@ VGS = 10V) (1)
26
A
RDS(ON) (@ VGS = 10V)
30
mΩ
Absolute Maximum Ratings (@ TA = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDS
100
V
Gate-to-Source Voltage
VGS
±20
V
Continuous Drain Current (1)
TC = 25°C
ID
26
A
TC = 100°C
16
Pulsed Drain Current (2)
IDM
70
A
Avalanche Current (3)
IAS
14
A
Avalanche Energy (3)
EAS
10
mJ
Power Dissipation (4)
TC = 25°C
PD
50
W
TC = 100°C
20
Junction & Storage Temperature Range
TJ , TSTG
-55 to 150
°C
TO-263-3L Package Information
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