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  • YZPST-R100P11A(3).jpg
  • YZPST-R100P11A(1).jpg
  • YZPST-R100P11A(5).jpg
  • R100P11A TO-252 Package.jpg

TO-252 R100P11A 100V P-Channel Trench Power MOSFET

100V P-Channel Trench Power MOSFET General Description The R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Features Low Gate Charge 100% UIS Tested, 100% DVDS Tested High Power and current handing capability Lead free product is acquired Application PWM Applications Load Switch Power Management

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  • 产品描述
  • 100V P-Channel Trench Power MOSFET
    General Description
    The R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.
    Features
    Low Gate Charge
    100% UIS Tested, 100% DVDS Tested
    High Power and current handing capability
    Lead free product is acquired
    Application
    PWM Applications
    Load Switch
    Power Management
    Key Performance Parametes

    Parameter

    Value

    Unit

    VDS

    -100

    V

    RDS(ON)_TYP

    156

    ID

    -11

    A

    QG

    42.5

    nC

     
    YZPST-R100P11A TO-252

    Table 1. Absolute Maximum Ratings (TC=25℃ unless otherwise noted)

    Symbol

    Parameter

    Limit

    Unit

    VDS

    Drain-Source Voltage (VGS=0V)

    -100

    V

    VGS

    Gate-Source Voltage (VDS=0V)

    ±20

    V

     

    ID

    Drain Current-Continuous(TC=25)

    -11

    A

    Drain Current-Continuous(TC=100)

    -6.7

    A

    IDM (pluse)

    Drain Current-Continuous@ Current-Pulsed (Note 1)

    -44

    A

     

    PD

    Maximum Power Dissipation(TC=25)

    48

    W

    Maximum Power Dissipation(TC=100)

    19

    W

    EAS

    Avalanche energy (Note 2)

    72

    mJ

    TJ, TSTG

    Operating Junction and Storage Temperature Range

    -55 To 150

     

    Table 2.   Thermal Characteristic

     

    Symbol

    Parameter

    Typ

    Max

    Unit

    RθJC

    Thermal Resistance, Junction-to-Case

     

    2.6

    /W

     

    TO-252 Package Information

    R100P11A TO-252 Package

     

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