TO-252 R100P11A 100V P-Channel Trench Power MOSFET
- 产品描述
-
100V P-Channel Trench Power MOSFETGeneral DescriptionThe R 100P11A uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a wide variety of applications.FeaturesLow Gate Charge100% UIS Tested, 100% DVDS TestedHigh Power and current handing capabilityLead free product is acquiredApplicationPWM ApplicationsLoad SwitchPower ManagementKey Performance Parametes
Parameter
Value
Unit
VDS
-100
V
RDS(ON)_TYP
156
mΩ
ID
-11
A
QG
42.5
nC
Table 1. Absolute Maximum Ratings (TC=25℃ unless otherwise noted)
Symbol
Parameter
Limit
Unit
VDS
Drain-Source Voltage (VGS=0V)
-100
V
VGS
Gate-Source Voltage (VDS=0V)
±20
V
ID
Drain Current-Continuous(TC=25℃)
-11
A
Drain Current-Continuous(TC=100℃)
-6.7
A
IDM (pluse)
Drain Current-Continuous@ Current-Pulsed (Note 1)
-44
A
PD
Maximum Power Dissipation(TC=25℃)
48
W
Maximum Power Dissipation(TC=100℃)
19
W
EAS
Avalanche energy (Note 2)
72
mJ
TJ, TSTG
Operating Junction and Storage Temperature Range
-55 To 150
℃
Table 2. Thermal Characteristic
Symbol
Parameter
Typ
Max
Unit
RθJC
Thermal Resistance, Junction-to-Case
2.6
℃/W
TO-252 Package Information
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