High Speed Switching 1200V TO-247-3 SiC MOSFET
- 产品描述
-
YZPST-IMW120R045M1(YZPST-RM040120T)\SiC MOSFETFeaturesHigh Speed Switching with Low CapacitancesHigh Blocking Voltage with Low RDS(on)Easy to parallelSimple to driveRoHS CompliantBenefitsIncreased Power DensityFaster Operating FreequencyReduction of Heat Sink RequirementsHigher EfficiencyReduced EMIApplicationsPower Factor Correction ModulesSwitch Mode Power SuppliesDC-AC InvertersHigh Voltage DC/DC Converters
Maximum ratings (Tj=25℃ unless otherwise specified)
Symbol
Parameter
Test conditions
Value
Unit
VDS
Drain-Source Voltage
1200
V
ID
Continuous Drain Current
Tc=25°C
Tc=100°C
74
52
A
IDM
Peak Drain Current
Pulse width tp limited by Tjmax
150
A
VGSmax
Gate-Source Voltage
-8/+22
V
VGSop
Recommend Gate-Source Voltage
-4/+ 18
V
Ptot
Power Dissipation
Tc=25°C
Tc=100°C
312
156
W
Tj
Operating Junction Temperature
-40~175
°C
Tstg
Storage Temperature
-40~175
°C
Electrical Characteristics
Static Characteristics
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ.
Max.
V(BR)DSS
Drain-Source Breakdown Voltage
ID=100μA, VGS=0V
1200
V
IDSS
Zero Gate Voltage Drain Current
VDS=1200V, VGS=0V
1
μA
IGSS
Gate-Source Leakage Current
VDS=0V, VGS=18V
250
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=10mA Tj=25°C
Tj=175°C
2
2.6
2.0
4
V
RDS(on)
Drain-Source On-State Resistance
VGS=18V, ID=40A Tj=25°C
Tj=175°C
37
47
mΩ
Package Outlines
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