40V Super-GaN FET 160A GaN transistor
- 产品描述
-
P/N:YZPST-RGN040C024 40V Super-GaN FET40V, 160A， 4. 3mΩ, Super -GaN FET in FCQFN 3x4FeaturesGaN-on-Silicon E-mode HEMT technologyVery low gate chargeUltra-low on resistanceVery small footprintApplicationsHigh frequency DC-DC converter Point of LoadRF envelope tracking PC chargerMobile power bank Motor driver
Pin information
Pin
Pin description
Pin function
1, 2, 24, 25
Gate
Driver Gate
3-7, 9, 11-20, 22
Source
Source
8, 10, 21, 23
Drain
Power Drain
Key performance parameters at TJ = 25 °C
Parameter
Value
Unit
VDS,max
40
V
RDS(on),max @ VGS = 5 V
4.3
mΩ
QG,typ @ VDS = 20V
6.2
nC
IDS,Pulse
160
A
QOSS@ VDS = 20V
14
nC
Maximum Ratings at TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MAX
UNIT
VDS
Drain-to-Source Voltage (Continuous)
40
V
ID
Continuous current
24
A
Pulsed (25˚C, TPulse = 300 µs)
160
A
VGS
Gate-to-Source Voltage
6
V
Gate-to-Source Voltage
-4
V
Ptot
Power dissipation (Tc, bottom = 25°C)
43
W
TJ
Operating Temperature
-40 to 150
˚C
TSTG
Storage Temperature
-40 to 150
˚C
Package Outlines
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