100V N-Channel Super Gate Trench Power MOSFET Transistor
- Product Description
-
100V N-Channel Super Gate Trench Power MOSFETP/N: YZPST-SS044N10APFEATURESSuper TrenchFET® Power MOSFETl100% avalanche testedImproved dv/dt capabilityAPPLICATIONSPrimary Side SwitchOther ApplicationsUninterruptible power supply
Device Ordering Marking Packing Information
Ordering Number
Package
Marking
Packing
SS044N10AP
TO-220
YZPST
SS044N10AP
Tube
Absolute Maximum Ratings TC = 25ºC, unless otherwise noted
Parameter
Symbol
Value
Unit
TO-220
Drain-Source Voltage (VGS = 0V)
VDSS
100
V
Continuous Drain Current
ID
135
A
Pulsed Drain Current (note1)
IDM
520
A
Gate-Source Voltage
VGSS
±20
V
Single Pulse Avalanche Energy (note2)
EAS
780
mJ
Power Dissipation (TC = 25ºC)
PD
208
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55~+150
ºC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.
Thermal Resistance
Parameter
Symbol
Value
Unit
TO-220
Thermal Resistance, Junction-to-Case
RthJC
0.60
ºC/W
Thermal Resistance, Junction-to-Ambient
RthJA
62.5
Specifications TJ = 25ºC, unless otherwise noted
Parameter
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
Static
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250µA
100
--
--
V
Zero Gate Voltage Drain Current
IDSS
VDS =100, VGS = 0V, TJ = 25ºC
--
--
1.0
μA
Gate-Source Leakage
IGSS
VGS = ±20V
--
--
±100
nA
Gate-Source Threshold Voltage
VGS(th)
VDS = 250µA
2.0
--
4.0
V
Drain-Source On-Resistance (Note3)
RDS(on)
VGS = 10V, ID =50A
--
3.6
4.4
mΩ
Dynamic
Input Capacitance
Ciss
VGS = 0V, VDS = 50V, f = 1.0MHz
--
7300
--
pF
Output Capacitance
Coss
--
850
--
Reverse Transfer Capacitance
Crss
--
25
--
Total Gate Charge
Qg
VDD = 50V, ID = 20A, VGS = 10V
--
114
--
nC
Gate-Source Charge
Qgs
--
37
--
Gate-Drain Charge
Qgd
--
26
--
Turn-on Delay Time
td(on)
VDD = 50V, ID =50A,VGS = 10V RG =3.0 Ω
--
32
--
ns
Turn-on Rise Time
tr
--
50
--
Turn-off Delay Time
td(off)
--
83
--
Turn-off Fall Time
tf
--
30
--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current
IS
TC = 25 ºC
--
--
135
A
Pulsed Diode Forward Current
ISM
--
--
520
Body Diode Voltage
VSD
TJ = 25ºC, ISD = 50A, VGS = 0V
--
0.9
1.2
V
Reverse Recovery Time
trr
VGS = 0V,IS = 50A, diF/dt =500A /μs
--
75
--
ns
Reverse Recovery Charge
Qrr
--
160
--
nC
Notes
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. VDD = 50V, RG = 25 Ω , Starting TJ = 25 ºC
3. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 1%
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