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62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

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62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

P/N:YZPST-P150HFN120AT1R6 62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode Features ■   Low  Switching   Losses ■    LoW    VcEsal ■  Low  VcE(sat  with  Positive  Temperature  Coefficient Applications ■  Motor  Drives     UPS   Systems ■  High  Power  Inverter
Product Number:
YZPST-P150HFN120AT1R6
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Product description
Parameters

P/N:YZPST-P150HFN120AT1R6

62mm module with fast Trench/Fieldstop IGBT and Fast Recovery Diode

Features

■   Low  Switching   Losses

■    LoW    VcEsal

■  Low  VcE(sat  with  Positive  Temperature  Coefficient

Applications

■  Motor  Drives

    UPS   Systems

■  High  Power  Inverter

Equivalent Circuit Schematic

P150HFN120AT1R6

 

IGBT -Inverter

Maximum   Rated   Values

 

Symbol

Description

Conditions

Values

Unit

VcEs

Collector-Emitter Voltage

Tv=25℃

1200

V

VGEs

Gate-Emitter Peak Voltage

Ty=25℃

±20

V

lc

Continuous DC Collector Current

Tc=100℃

150

A

CRM

Repetitive Peak Collector Current

tp=1ms

300

A

Ptot

Total Power Dissipation

Tc=25℃,Tyjmax=175℃

1500

W

Characteristic Values

 

 

 

 

Symbol     Values  
Description Conditions Min. Typ. Max. Unit
VcE(sat Collector-Emitter Saturation Voltage VcE=15V,Ic=150A,Tv=25℃   2.2   V
Vge=15V,Ic=150A,Tv=125℃   2.5   V
VgE(th Gate Threshold Voltage VgE=VcE,Ic=3.8mA 5 5.8 6.5 V
IcEs Collector-Emitter Cut-Off Current VcE=1200V,VgE=0V       mA
GES Gate-Emitter Leakage Current VcE=20V,VcE=0V     600 nA
RGint Internal Gate Resistor Ty=25℃   3.8   Ω
Cies Input Capacitance     11.5   nF
Coes Output Capacitance Vce=25V,Vce=0V,f=1MHz   1   nF
Cres Reverse Transfer Capacitance     0.4   nF
tt(on) Turn-on Delay Time     139   ns
Vcc=600V
t Turn-on Rise Time VoE=±15V   37   nS
d(a) Turn-off Delay Time Ic=150A   192   nS
t Turn-off Fall Time Rg=2.0g   128   nS
Eon Turn-on Switching Loss Inductive Load   7.9 -= mJ
E₀ff Turn-off Switching Loss Ty=25℃   8.4   mJ
Isc Short Circuit Data VcE≤15V,Vcc=600V   518   A
tp≤10μs,Tv=25℃
  Thermal Resistance,Junction to Case Per IGBT —-- 0.1 —-- K/W
Twop Virtual Junction Temperature Under Switching -40   150

Diode   -Inverter

Maximum Rated Values

Symbol

Description

Conditions

Values

Unit

VRRM

Repetitive Peak Reverse Voltage

Tv=25℃

1200

V

lF

Continuous DC Forward Current

 

150

A

lFRM

Repetitive Peak Collector Current

tp=1ms

300

A

Characteristic Values

Symbol     Values  
Description Conditions Min. Typ Max. Unit
  Forward Voltage lr=150A,Vse=0V,Tv=25℃   2.5   V
VF l=150A,Vge=0V,Tv=125℃   1.9 —-- V
RM Peak Reverse Recovery Current   —-- 42   A
Qr Recovered Charge l=150A,Vg=600V,Vge=-15V   3.1   uC
Erec Reverse Recovery Energy Ty=25℃   1.1   mJ
Tuop Virtual Junction Temperature Under Switching -40   150

Package        Outlines(mm)

YZPST-P150HFN120AT1R6

 

Keyword:
Fieldstop IGBT Module
62mm Module with Fast Trench
Fast Recovery Diode
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