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1300V Fast Switching Reverse-conducting Thyristor RCT

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1300V Fast Switching Reverse-conducting Thyristor RCT

Features:  All Diffused Structure  Interdigitated Amplifying Gate Configuration           Blocking capabilty up to 1300 volts  Guaranteed Maximum Turn-Off Time  High dV/dt Capability  Pressure Assembled Device
Product Number:
YZPST-SHR400R22
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Product description
Parameters

YZPST-SHR400R22 Fast Switching Reverse-conducting Thyristor

RCT FOR INVERTER AND CHOPPER APPLICATIONS

Features:

 All Diffused Structure

 Interdigitated Amplifying Gate Configuration                  

 Blocking capabilty up to 1300 volts

 Guaranteed Maximum Turn-Off Time

 High dV/dt Capability

      Pressure Assembled Device

Blocking - Off State

Device Type

VDRM

VDSM

SHR400R22

1300

1300

VDRM = Repetitive peak off state voltage

VDSM = Non-repetitive peak off state voltage

            (Non-repetitive<5ms, Tj=0~115℃)

Repetitive peak off state leakage

IDRM

35 mA

Critical rate of voltage rise

dV/dt

1000 V/msec

Conducting - on state

Parameter

Symbol

Min.

Max.

Typ

Units

Conditions

RMS value of on-state current

ITRMS

 

 630

 

A

Nominal value

Average on-state current

IT(AV)

 

   400

 

A

Continuous single-phase,half sine wave,180°conduction

Peak one cycle surge on-state current(non repetitive)

ITSM

 

7200

 

A

50Hz, sinusoidal wave-

shape, 180o conduction, Tj = 11oC

I2t Limit Value

I2t

 

200x103

(On-Current)

 

A2s

 

31x103

(Reverse Current)

Peak on-state voltage

VTM

 

3.0

 

V

ITM =1250A; Tj = 25 oC

Critical rate of rise of on-state

current

di/dt

 

      100

 

A/ms

VD=1/2VDRM,ITM=800A f=60HZIGM=1.5A,diG/dt=1.0A/us,Tj=115      

Average reverse current

IR(AV)

 

     150

 

A

Continuous single-phase,half sine wave,180°conduction

RMS reverse currrnt

IR(RMS)

 

235

 

A

 

Peak reverse voltage

VRM

 

2.5

 

V

IRM=500A, Tj = 25 oC

Peak one cycle surge  reverse current(non repetitive)

IRSM

 

2500

 

A

50Hz, sinusoidal wave-

shape, 180o conduction, Tj = 11oC

Critical rate of rise of commutating off-state voltage 

(dv/dt)C

200

 

 

A/ms

ITM=2000A,tw=60us,IRM=1000A, ,VDM=1/2VDRM,Pulse width 60m,Tj=115,

Gating

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

PGM

 

20

 

W

t= 40 us

Average gate power dissipation

PG(AV)

 

4

 

W

 

Peak gate current

IGM

 

4

 

A

 

Gate current required to trigger all units

IGT

 

200

 

 

mA

 

VD = 6 V;RL = 6 ohms;TC = 25 oC

Holding current

IH

 

500

 

 

Tj = 2o;RL = 6 ohms

Gate voltage required to trigger all units

VGT

 

3.0

 

V

VD = 6 V;RL = 6 ohms;TC = 25oC

Peak non- trigger voltage

VGD

 

0.15

 

V

Tj = 11oC;VD=1/2VDRM

YZPST-SHR400R22-1

Keyword:
Reverse- Conducting Thyristor
Fast Switching RCT
1300V Reverse-conducting Thyristor RCT
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