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1600V High power thyristor assembly for phase control applications

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1600V High power thyristor assembly for phase control applications

Features: . All Diffused Structure . Amplifying Gate Configuration . Blocking capabilty up to 1600 volts . Guaranteed Maximum Turn-Off Time . High dV/dt Capability . Pressure Assembled Device
Product Number:
YZPST-KP641-16E
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Product description
Parameters
HIGH POWER THYRISTOR ASSEMBLY
FOR PHASE CONTROL APPLICATIONS

Type: YZPST-KP641/16E

 

Features:

. All Diffused Structure

. Amplifying Gate Configuration

. Blocking capabilty up to 1600 volts

. Guaranteed Maximum Turn-Off Time

. High dV/dt Capability

. Pressure Assembled Device

 

ELECTRICAL CHARACTERISTICS AND RATINGS

Parameter

Symbol

Maximu

m Limits

Units

Conditions

Repetitive peak reverse voltage

RRM

1600

V

 

Repetitive peak off state voltage

DRM

1600

V

 

Average value of on-state current

I T(AV)

641

A

Sinewave,180 o conduction,T sink =70 

Peak one cycle surge

(non repetitive) current

TSM

9900

A

10.0 msec (50Hz), sinusoidal wave-shape,

180 conduction, T j = 125 

 

RRM

30

mA

Tj = 125 ℃

 

DRM

30

mA

Tj = 125 ℃

Peak on-state voltage

TM

1.5

V

Tj = 125 ℃ ITM=1000A

Threshold voltage

V T(TO)

0.99

V

T j =1 25 ℃

Slope resistance

T

0.52

T j =1 25 ℃

Average gate power dissipation

P G(AV)

3

W

 

Gate current

GT

300

mA

V D = 6 V;R L = 3 ohms;T j = +25 ℃

Gate voltage

GT

3.5

V

V D = 6 V;R L = 3 ohms;T j = 0-125 ℃

Latching current

I L

1000

mA

V D = 24 V; R L = 12 ohms

Holding current

I H

300

mA

V D = 24 V; I = 2.5 A

Critical rate of voltage rise

dV/dt

1000

V/s

VD=2/3VDRM

Critical rate of rise of on-state

current

di/dt

200

A/ s

Switching from V DRM 1000 V,

non-repetitive

Operating temperature

T

-30-125

 

Storage temperature

T stg

-30-125

 

 

 

 CASE OUTLINE AND DIMENSIONS.

YZPST-KP641-16E.jpg

Keyword:
1600V thyristor assembly
thyristor assembly
assembly for phase control applications
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